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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.75A 6DFN
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta), 520mA (Ta)
- Rds On (Max) @ Id, Vgs：250mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V, 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：33pF @ 16V, 36pF @ 10V
- Power - Max：350mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1010B-6
- Grade：-
- Qualification：-
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Overview
The SI3439KU6-TP is a dual N-channel and P-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in a DFN1010B-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V. Continuous drain current ratings are specified at 520 mA for the N-channel and 750 mA for the P-channel variant. On-resistance values are 250 mOhms for the N-channel and 2 Ohms for the P-channel. Gate-source voltage limits are ±10 V, with a threshold voltage of 1.2 V. Total gate charge is rated at 1.2 nC for the N-channel and 1.4 nC for the P-channel. Power dissipation is 350 mW, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- Integrates complementary N-channel and P-channel transistors into a single compact component.
- Designed for low-voltage signal switching and load management applications.
- Supports surface-mount assembly via a small footprint DFN package.
Applications
- Battery protection circuits
- Small signal switching
- Load switch implementations
Procurement Notes
Verify the specific datasheet version and electrical characteristics directly from the manufacturer before integration. Confirm that the DFN1010B-6 package dimensions align with your PCB layout constraints. Ensure thermal management strategies account for the 350 mW power dissipation rating under expected operating conditions. Cross-reference pin assignments with official documentation to prevent installation errors.
Selection Notes
Select this component when a dual complementary MOSFET solution is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Compare on-resistance and current capabilities against circuit requirements. Consider the DFN1010B-6 package for space-constrained designs requiring both N-type and P-type switching elements.
Part Context
This part belongs to the Micro Commercial Components discrete semiconductor portfolio. It serves as a dual-transistor alternative to using separate N-channel and P-channel devices. The DFN1010B-6 packaging facilitates automated surface-mount placement. It targets applications needing integrated complementary switching in portable or compact electronics.
Replacement Considerations
Consult official substitution guides for verified equivalents. Verify pin compatibility and electrical parameters match before replacing. Generic cross-references may not guarantee identical performance or package integrity.
