SI3441BDV-T1-E3

$0.36

Description：MOSFET P-CH 20V 2.45A 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:89d12fd8556a Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI3441BDV-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 2.45A 6TSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI3441BDV-T1-E3

Description：MOSFET P-CH 20V 2.45A 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id：850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：860mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-TSOP
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for SI3441BDV-T1-E3

SI3441BDV-T1-E3

Single FETs, MOSFETs Overview

The SI3441BDV-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a TSOP-6 surface-mount package and operates with a drain-source voltage of -20 V and a continuous drain current of 8 A. The device exhibits a maximum on-resistance of 27.5 mOhms at a gate-source voltage of 4.5 V. Thermal performance includes a power dissipation rating of 2.97 W, with an operating temperature range spanning from -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

Employs TrenchFET technology for enhanced switching efficiency and low conduction losses.
Designed for high-speed switching applications with rapid rise and fall times.
Provides robust thermal management capabilities within a compact surface-mount footprint.

Single FETs, MOSFETs Applications

Power distribution circuits requiring efficient load switching.
High-side or low-side driver configurations in portable electronics.
DC-DC converter output stages for voltage regulation.

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors due to potential counterfeits. Confirm RoHS compliance status via official documentation. Check for end-of-life notifications as availability may be restricted. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity damage prior to assembly.

Single FETs, MOSFETs Selection Notes

Evaluate the -20 V breakdown voltage against circuit requirements to ensure adequate safety margins. Assess the 8 A current capacity relative to peak load demands during operation. Consider the TSOP-6 package dimensions for PCB layout constraints. Review thermal resistance values to determine necessary heat dissipation strategies under continuous load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the SI3 series of MOSFETs from Vishay Siliconix, known for integrating advanced trench gate technology. The series targets applications demanding high density and efficiency in power management solutions. The specific model integrates protection features typical of modern discrete power semiconductors.