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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 2.5A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：2.5A, 1.95A
- Rds On (Max) @ Id, Vgs：125mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：205pF @ 20V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3529DV-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a TSOP-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current of 4.7 A. The on-resistance is specified at 8.5 mΩ at a gate-source voltage of 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature. The component is lead-free and RoHS compliant, belonging to the SI3 series.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single compact package for space-constrained designs.
- TrenchFET technology provides low on-resistance and optimized switching performance compared to standard planar structures.
- Enhanced thermal efficiency through a low-profile surface-mount package suitable for automated assembly processes.
Applications
- Power distribution circuits in portable electronic devices
- Load switching applications in battery-powered systems
- DC-DC converter output stages
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm RoHS compliance status and specific tape-and-reel packaging details prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to prevent package damage during soldering.
Selection Notes
Select this component when a dual N-channel configuration with low on-resistance is required in a TSOP-6 footprint. Evaluate thermal dissipation requirements against the package's power handling capabilities. Compare gate charge specifications with driver capabilities to ensure adequate switching speed without excessive drive current demands.
Part Context
This part belongs to the Vishay Siliconix SI3 series of small signal MOSFETs. The SI3529DV variant specifically offers a dual N-channel arrangement. It serves as an alternative to single-channel solutions where board space is limited but multiple switching functions are needed. The E3 suffix indicates lead-free termination.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters before considering any cross-reference components from other manufacturers.
