SI3529DV-T1-GE3

Overview

The SI3529DV-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a TSOP-6 surface-mount package and operates with a drain-source voltage of -30V and a continuous drain current of 4.7A. The device exhibits a maximum on-resistance of 38 milliohms at a gate-source voltage of -10V. It supports a gate-source voltage range of ±20V and maintains an operating temperature range from -55°C to +150°C. The component is RoHS compliant and part of the SI3 series.

Feature Summary

• TrenchFET technology for optimized performance
• Surface-mount TSOP-6 packaging
• Enhancement mode operation

Applications

• Power management circuits
• Load switching applications
• DC-DC converter outputs

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics. Confirm RoHS compliance status through manufacturer documentation. Check for obsolescence notices as distribution availability may vary. Ensure sourcing channels provide authentic components with traceable manufacturing records.

Selection Notes

Select this component for low-side or high-side switching where compact size is required. Compare on-resistance and current ratings against circuit requirements. Verify thermal dissipation capabilities within the TSOP-6 package constraints. Ensure gate drive voltages align with the specified ±20V limit.

Part Context

This part belongs to the Vishay SI3 series of power MOSFETs. It shares the TrenchFET technology platform with other devices in the lineup. The TSOP-6 package is common for single-channel logic-level FETs in space-constrained designs.

Replacement Considerations

Consult official substitution guides for electrically equivalent parts. Verify pin compatibility and thermal performance before replacing.