SI3585CDV-T1-GE3

Overview

The SI3585CDV-T1-GE3 is a dual-channel MOSFET from Vishay Siliconix, integrating an N-channel and a P-channel device within a single TSOP-6 package. The N-channel component provides a maximum drain-source voltage of 20 V with a typical on-resistance of 0.058 Ω at a gate-source voltage of 4.5 V, supporting a continuous drain current of 3.9 A. The complementary P-channel unit shares the same 20 V rating but features a typical on-resistance of 0.195 Ω at -4.5 V, accommodating a continuous drain current of 2.1 A. Both channels utilize TrenchFET technology.

Feature Summary

• Integrates complementary N-channel and P-channel power switches in a compact surface-mount package to minimize board space.
• Utilizes TrenchFET technology for optimized low on-state resistance and efficient switching performance.
• Includes 100% gate resistance testing to ensure consistent switching characteristics across production batches.

Applications

• Load Switch for Portable Devices
• DC/DC Converters
• Drivers: Motor, Solenoid, Relay

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Confirm that the TSOP-6 package dimensions align with the recommended land pattern specifications provided by the manufacturer. Ensure that thermal management strategies account for the junction-to-ambient resistance ratings under steady-state conditions.

Selection Notes

Select this component when a design requires matched N-type and P-type switching capabilities within a constrained footprint. Evaluate the on-resistance values at the intended operating gate voltages to ensure adequate efficiency. Consider the continuous and pulsed current limits relative to the expected load profile and ambient temperature conditions.

Part Context

This part belongs to the Si3585CDV series of dual-channel MOSFETs manufactured by Vishay Siliconix. It is designed as a compact solution for applications requiring both high-side and low-side switching functions. The integration of complementary channels simplifies circuit topology compared to using discrete single-channel devices.

Replacement Considerations

Direct pin-compatible replacements must maintain the TSOP-6 form factor and match the 20 V drain-source voltage rating. Verify that alternative components offer comparable on-resistance and current handling capabilities to ensure equivalent thermal and electrical performance.

FAQ

What is the maximum gate-source voltage rating for the SI3585CDV?

The absolute maximum rating for the gate-source voltage (VGS) is ±12 V for both the N-channel and P-channel devices.

How does the on-resistance of the P-channel device compare to the N-channel device?

At a gate-source voltage of 4.5 V, the P-channel typical on-resistance is 0.195 Ω, which is higher than the N-channel typical on-resistance of 0.058 Ω.

Is the SI3585CDV suitable for automotive applications?

The standard datasheet does not list AEC-Q101 qualification or automotive grade certification for this specific part number; verification of specific application requirements is necessary.