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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 2.9A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.9A, 2.1A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3586DV-T1-E3 is a dual N- and P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20-V drain-source breakdown voltage (Vds) for both channels. The device is housed in a TSOP-6 surface-mount package. Key electrical parameters include a maximum continuous drain current of 4.8 A for the N-channel and 3.7 A for the P-channel at 25°C. The on-resistance (Rds(on)) is specified at 25 mΩ for the N-channel and 35 mΩ for the P-channel at Vgs = ±4.5 V. The component operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Complementary N- and P-channel configuration in a single compact package
- TrenchFET power MOSFET technology for low on-resistance and fast switching
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load switching for portable devices
- Battery protection circuits
- Power management in mobile electronics
Procurement Notes
Verify the specific suffix 'E3' confirms RoHS compliance and halogen-free status as per manufacturer standards. Confirm the 'T1' designation indicates the correct reel packaging format for automated assembly. Check current lifecycle status, as availability may vary by region or distributor. Ensure the TSOP-6 footprint matches the target PCB layout constraints.
Selection Notes
Select this component when space-constrained designs require complementary switching capabilities. The low Rds(on) values support efficient power handling in small footprints. Verify that the 20-V rating aligns with the system's supply voltage requirements. Consider the thermal performance characteristics inherent to the TSOP-6 package for heat dissipation needs.
Part Context
This part belongs to the SI3 series of Vishay Siliconix MOSFETs, which are designed for general-purpose switching applications. The TSOP-6 package provides a small outline transistor form factor suitable for high-density board layouts. It serves as a complementary pair solution, eliminating the need for separate discrete components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Vishay resources for direct pin-compatible alternatives if obsolescence occurs.
