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The SI3586DV-T1-GE3 is a complementary N- and P-channel MOSFET pair manufactured by Vishay Siliconix. Utilizing TrenchFET technology, this component integrates two transistors within a single TSOP-6 surface-mount package to minimize footprint. The device operates with a drain-source voltage of 20V for both channels. It features very low on-resistance to enhance circuit efficiency and supports fast switching speeds suitable for portable applications. The unit complies with RoHS directives and is supplied in tape and reel packaging.
Verify the specific ordering suffix against the manufacturer's current datasheet to ensure correct packaging and compliance status. Confirm that the TSOP-6 pinout matches the target PCB layout design before finalizing procurement orders.
Select this component when a matched N- and P-channel pair is required in a minimal space constraint. Ensure the 20V voltage rating aligns with the system's maximum operating conditions and verify thermal dissipation capabilities within the TSOP-6 package limits.
This part belongs to the Vishay Siliconix SI3 series of small-signal MOSFETs. It is designed as a complementary pair solution, replacing discrete components to save board area. The TSOP-6 package is standard for low-power dual-transistor applications in consumer electronics.
Consult official documentation for recommended alternatives such as the SI3585CDV-T1-GE3. Verify pin compatibility and electrical parameters before substituting any other complementary MOSFET pairs.