SI3586DV-T1-GE3

SI3586DV-T1-GE3

$0.82
  • Description:MOSFET N/P-CH 20V 2.9A 6TSOP
  • Series:TrenchFET®

SKU:5891af359620 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 2.9A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.9A, 2.1A
  • Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:830mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Grade:-
  • Qualification:-

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SI3586DV-T1-GE3

Overview

The SI3586DV-T1-GE3 is a complementary N- and P-channel MOSFET pair manufactured by Vishay Siliconix. Utilizing TrenchFET technology, this component integrates two transistors within a single TSOP-6 surface-mount package to minimize footprint. The device operates with a drain-source voltage of 20V for both channels. It features very low on-resistance to enhance circuit efficiency and supports fast switching speeds suitable for portable applications. The unit complies with RoHS directives and is supplied in tape and reel packaging.

Feature Summary

  • Complementary N- and P-channel configuration integrated into a single compact package
  • TrenchFET technology providing very low on-resistance for improved power efficiency
  • Fast switching characteristics optimized for small footprint requirements

Applications

  • Load switching for portable electronic devices
  • Power management circuits requiring complementary channel control
  • Battery protection and load switch applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current datasheet to ensure correct packaging and compliance status. Confirm that the TSOP-6 pinout matches the target PCB layout design before finalizing procurement orders.

Selection Notes

Select this component when a matched N- and P-channel pair is required in a minimal space constraint. Ensure the 20V voltage rating aligns with the system's maximum operating conditions and verify thermal dissipation capabilities within the TSOP-6 package limits.

Part Context

This part belongs to the Vishay Siliconix SI3 series of small-signal MOSFETs. It is designed as a complementary pair solution, replacing discrete components to save board area. The TSOP-6 package is standard for low-power dual-transistor applications in consumer electronics.

Replacement Considerations

Consult official documentation for recommended alternatives such as the SI3585CDV-T1-GE3. Verify pin compatibility and electrical parameters before substituting any other complementary MOSFET pairs.

SI3586DV-T1-GE3SI3586DV-T1-GE3
$0.82
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