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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.5A, 570mA
- Rds On (Max) @ Id, Vgs：80mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW, 83mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3588DV-T1-GE3 is a dual N- and P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a -55 °C to +150 °C temperature range. The package is TSOP-6. Electrical characteristics include a continuous drain current of 2.5 A for the N-channel and 2.0 A for the P-channel. On-resistance values are specified at 0.045 Ω and 0.055 Ω respectively. Gate-source voltage is rated at ±12 V.
Feature Summary
- Dual configuration integrating complementary N- and P-channel transistors in a single compact package.
- TrenchFET power transistor technology designed for low on-resistance and efficient switching performance.
Applications
- Power management circuits
- Battery protection systems
- Synchronous rectification applications
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Validate package marking against manufacturer specifications. Ensure storage conditions meet semiconductor handling standards. Cross-reference ordering information with current Vishay documentation.
Selection Notes
Evaluate thermal requirements based on total power dissipation limits. Compare on-resistance values against circuit efficiency targets. Verify gate charge specifications for driver compatibility. Assess voltage ratings relative to system operating conditions. Consider package dimensions for PCB layout constraints.
Part Context
This component belongs to the SI3 series of dual MOSFETs. It complements other Vishay products like the SI3552BDV. The device serves as an alternative to discrete transistor pairs. It supports designs requiring space-efficient power switching solutions.
Replacement Considerations
SI3585CDV-T1-GE3 is a recommended alternative with similar electrical characteristics. Verify pinout compatibility before substitution. Check parameter tolerances against original design specifications.
