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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 2.5A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A, 1.7A
- Rds On (Max) @ Id, Vgs：77mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI3590DV-T1-E3 is a dual MOSFET in a TSOP-6 package, integrating an N-channel and a P-channel TrenchFET device. The N-channel unit supports a drain-source voltage of 30 V with a maximum continuous drain current of 3 A at 25 °C and an on-resistance of 0.077 Ω at VGS = ±4.5 V. The P-channel counterpart provides -30 V breakdown and -2 A continuous current, featuring an on-resistance of 0.170 Ω under identical gate drive conditions. Both channels operate within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- TrenchFET power MOSFET technology for minimized conduction losses
- Optimized high-side and low-side switching configuration
- Ultra-low on-resistance across both channel polarities
Applications
- Portable devices including PDAs, cellular phones, and pagers
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates lead-free compliance, while GE3 denotes lead-free and halogen-free status. Confirm that the required component matches the exact suffix intended for your design specifications.
Selection Notes
Evaluate thermal resistance ratings when designing for steady-state or pulsed operations. Ensure gate drive voltages align with specified thresholds for optimal RDS(on) performance. Validate safe operating area limits against expected load currents and voltage spikes during transient conditions.
Part Context
This component belongs to the Si3590DV series manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve enhanced efficiency in compact surface-mount packages suitable for portable electronics.
Replacement Considerations
Si3590DV-T1-GE3 is a confirmed halogen-free variant of this component.
FAQ
What are the absolute maximum ratings for gate-source voltage?
The absolute maximum rating for gate-source voltage (VGS) is ±12 V for both the N-channel and P-channel configurations.
How does the on-resistance vary with gate voltage?
For the N-channel, RDS(on) increases from 0.077 Ω at VGS = 4.5 V to 0.120 Ω at VGS = 2.5 V. For the P-channel, it rises from 0.170 Ω at VGS = -4.5 V to 0.300 Ω at VGS = -2.5 V.
