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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.4A, 960mA
- Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.08W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3850ADV-T1-E3 is a dual N-channel and P-channel MOSFET pair manufactured by Vishay Siliconix. It utilizes TrenchFET technology within a TSOP-6 surface-mount package. The component integrates complementary silicon transistors designed for low-voltage power switching applications. Key electrical characteristics include a drain-source voltage rating of -20V for the N-channel device and +12V for the P-channel device, with a gate-source voltage limit of ±20V. The unit weighs approximately 20 mg and operates within a temperature range defined by standard commercial specifications.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single compact package
- Utilizes TrenchFET technology for optimized performance
- Designed for surface-mount installation via TSOP-6 footprint
Applications
- Low-voltage DC/DC converter circuits
- Power management modules requiring complementary switching
- Battery protection and load switch applications
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of current availability requires checking authorized distributors for remaining stock or obsolete inventory. Engineering teams should initiate replacement qualification processes immediately due to discontinuation status. Confirm RoHS compliance details through official datasheets before final procurement decisions.
Selection Notes
Designers must evaluate alternative components from the same family or newer generations due to the EOL status. Verify that substitute parts match the TSOP-6 pinout and electrical ratings for both N-channel and P-channel devices. Ensure thermal resistance and gate charge parameters align with existing circuit requirements to maintain system stability during migration.
Part Context
The SI3850ADV belongs to the SI3 series of discrete power semiconductors produced by Vishay Siliconix. This series focuses on small-signal and power MOSFET solutions utilizing advanced silicon die technologies. The specific ADV suffix indicates a dual configuration variant within this product line, targeting space-constrained designs.
Replacement Considerations
Public documentation lists SI3585CDV-T1-GE3 as a recommended alternative. Engineers should verify compatibility regarding voltage ratings and package dimensions before substitution.
