SI3909DV-T1-GE3

Overview

The SI3909DV-T1-GE3 is a dual P-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device features a maximum drain-source voltage of -40 V and a continuous drain current of -8 A. It is housed in a TSOP-6 surface-mount package, suitable for applications requiring compact footprints. Key electrical parameters include a maximum Rds(on) of 27 mΩ at Vgs = -10 V and a typical gate charge of 63 nC. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Dual channel configuration integrates two independent P-channel MOSFETs into a single compact package.
• TrenchFET technology provides optimized specific on-resistance for improved power efficiency.
• Enhancement mode operation ensures reliable switching with standard logic-level gate drive compatibility.

Applications

• High-side load switching in portable battery-powered devices
• Power management circuits in consumer electronics
• Motor control interfaces requiring complementary N/P-channel pairs

Procurement Notes

Verify the exact ordering suffix and manufacturer lot codes against official Vishay Siliconix documentation before procurement. Ensure that the received components match the specified TSOP-6 package dimensions and pinout configuration. Confirm RoHS compliance status through the manufacturer's latest declaration. Cross-reference the part number with authorized distributors to avoid counterfeit components. Validate thermal performance requirements against the datasheet specifications for your specific application environment.

Selection Notes

Select this component when a dual P-channel solution is required in a small outline package. Compare the 27 mΩ on-resistance and -8 A current rating against alternative packages like SO-8 or SOT-23 if space constraints differ. Consider the 63 nC gate charge for driving capability requirements. Evaluate the -40 V breakdown voltage against system supply rails. Verify that the TSOP-6 footprint matches the PCB layout design rules.

Part Context

This part belongs to the Vishay Siliconix SI3 series of TrenchFET MOSFETs. It is designed as a complement to N-channel devices in half-bridge and high-side driver configurations. The dual configuration reduces board space compared to using two discrete single-channel MOSFETs. It is commonly used in mobile phones, PDAs, and other handheld devices where power efficiency and size are critical.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±20 V.

Is this component lead-free?

Yes, the SI3909DV-T1-GE3 is compliant with RoHS directives and is lead-free.

What is the typical turn-on delay time?

The datasheet specifies a typical turn-on delay time (td(on)) of 12 ns.