SI3948DV-T1-E3

SI3948DV-T1-E3

$0.74
  • Description:MOSFET 2N-CH 30V 6TSOP
  • Series:TrenchFET®

SKU:da660886f710 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:105mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.15W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Grade:-
  • Qualification:-

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SI3948DV-T1-E3

Overview

The Vishay Siliconix SI3948DV-T1-E3 is a dual N-channel power MOSFET utilizing TrenchFET technology. It features two independent channels within a compact TSOP-6 surface-mount package. The device supports a drain-source voltage of 30V and delivers a continuous drain current of 2.5A. Key electrical characteristics include a maximum on-resistance of 75 milliohms at a gate drive of 10V, with a threshold voltage ranging from 1 to 2 volts. It operates reliably across an extended temperature range from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration for efficient space-constrained designs
  • TrenchFET technology ensures low conduction losses
  • Logic-level gate drive compatibility for direct interfacing

Applications

  • Battery protection circuits
  • Power management modules
  • Load switching applications

Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm lead-free status and RoHS compliance. Confirm the package designation matches the required TSOP-6 footprint. Ensure the manufacturer source is authorized to guarantee component authenticity and traceability.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. Consider the 75 milliohm on-resistance for thermal management. Evaluate the 30V rating against system voltage requirements. Verify gate drive levels align with the specified threshold voltage range.

Part Context

This part belongs to the Vishay Siliconix TrenchFET series, known for optimized power performance. It serves as a dual-channel alternative to single MOSFETs, reducing board space. The TSOP-6 package facilitates automated assembly processes.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic cross-references may not match the specific on-resistance or package dimensions.

SI3948DV-T1-E3SI3948DV-T1-E3
$0.74
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