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The Vishay Siliconix SI3948DV-T1-E3 is a dual N-channel power MOSFET utilizing TrenchFET technology. It features two independent channels within a compact TSOP-6 surface-mount package. The device supports a drain-source voltage of 30V and delivers a continuous drain current of 2.5A. Key electrical characteristics include a maximum on-resistance of 75 milliohms at a gate drive of 10V, with a threshold voltage ranging from 1 to 2 volts. It operates reliably across an extended temperature range from -55°C to +150°C.
Verify the specific suffix against official Vishay documentation to confirm lead-free status and RoHS compliance. Confirm the package designation matches the required TSOP-6 footprint. Ensure the manufacturer source is authorized to guarantee component authenticity and traceability.
Select this component when a dual N-channel solution is required in a minimal footprint. Consider the 75 milliohm on-resistance for thermal management. Evaluate the 30V rating against system voltage requirements. Verify gate drive levels align with the specified threshold voltage range.
This part belongs to the Vishay Siliconix TrenchFET series, known for optimized power performance. It serves as a dual-channel alternative to single MOSFETs, reducing board space. The TSOP-6 package facilitates automated assembly processes.
Consult official substitution lists for verified equivalents. Generic cross-references may not match the specific on-resistance or package dimensions.