SI3951DV-T1-E3

Overview

The Vishay Siliconix SI3951DV-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in a TSOP-6 surface-mount package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -2.7 A at TC = 25 °C. The on-state resistance (RDS(on)) is specified as 0.115 Ω max at VGS = -4.5 V and 0.205 Ω max at VGS = -2.5 V. Total gate charge (Qg) is typically 3.2 nC at VGS = -4.5 V. The device supports an operating junction temperature range from -55 °C to 150 °C.

Feature Summary

• Dual P-channel configuration with independent Drain, Gate, and Source terminals for each channel.
• TrenchFET power MOSFET architecture optimized for PWM applications.
• Halogen-free construction compliant with IEC 61249-2-21 standards.

Applications

• Power distribution circuits
• Load switches
• DC/DC converter output stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The E3 suffix indicates lead-free manufacturing. Confirm availability status directly with authorized distributors or the manufacturer, as commercial production cycles may affect supply continuity.

Selection Notes

Evaluate thermal management requirements based on the maximum junction-to-ambient thermal resistance of 110 °C/W under steady-state conditions. Ensure gate drive voltages align with the specified RDS(on) test conditions to maintain optimal conduction losses within the absolute maximum ratings.

Part Context

This component belongs to the Vishay Siliconix SI3 series of dual MOSFETs. It shares the TSOP-6 footprint and general electrical characteristics with other variants in the family, such as the SI3911DV-T1-GE3, while offering specific performance parameters tailored for low-voltage power switching applications.

Replacement Considerations

SI3911DV-T1-GE3