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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.6A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.6A
- Rds On (Max) @ Id, Vgs：185mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3981DV-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It features a drain-source voltage rating of 20V and a continuous drain current of 1.6A per channel. The device utilizes the TrenchFET technology for optimized gate charge and low on-resistance. It is housed in a surface-mount TSOP-6 package, designed for efficient thermal performance with a power dissipation capability of 800mW. This component serves as a compact switching solution for low-voltage applications.
Feature Summary
- Dual P-channel configuration within a single compact package
- TrenchFET technology for enhanced switching efficiency
- Surface-mount TSOP-6 packaging for automated assembly
Applications
- Battery-powered portable electronics
- Low-voltage load switching circuits
- Power management modules in consumer devices
Procurement Notes
Verify the specific manufacturing date code and lot traceability upon order confirmation to ensure compliance with project requirements. Confirm RoHS compliance status through official documentation provided by the manufacturer or authorized distributors. Ensure that the received components match the exact part number designation to avoid integration issues during PCB assembly processes.
Selection Notes
Select this component when a dual P-channel switch is required in a minimal footprint design. The 20V rating suits single-cell lithium-ion battery systems. Consider the TSOP-6 package constraints for board space limitations. Evaluate the 1.6A current limit against peak load demands to ensure reliable operation without exceeding thermal boundaries under worst-case conditions.
Part Context
This part belongs to the SI3 series of power MOSFETs from Vishay Siliconix. It complements other small-signal and power transistors in the portfolio. The TSOP-6 form factor is common for dual complementary or symmetrical configurations. It fits into the broader category of surface-mount discrete semiconductors used in modern electronic equipment.
Replacement Considerations
Check for direct pin-compatible alternatives within the same TSOP-6 package family. Verify that substitute parts meet or exceed the 20V Vds and 1.6A Id specifications. Ensure electrical characteristics such as Rds(on) and gate threshold voltage are compatible with the existing circuit design parameters.
