SI3983DV-T1-GE3

Overview

The SI3983DV-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a TSOP-6 surface-mount package and operates with a drain-source voltage of -20V and a continuous drain current of 8A. The device exhibits a maximum on-resistance of 20 milliohms at a gate-source voltage of -4.5V. It supports a wide operating temperature range from -55°C to +150°C junction temperature. The component is supplied in reel or cut tape formats, with a factory pack quantity of 3000 units.

Feature Summary

• TrenchFET power MOSFET technology for optimized performance
• Low on-resistance design for efficient power switching
• Enhanced mode operation for direct logic control

Applications

• Power management circuits
• Load switches
• DC-DC converter outputs

Procurement Notes

Verify the specific ordering suffix and package variant when sourcing this component, as availability may vary across distributors. Confirm RoHS compliance status through official documentation prior to integration. Check for obsolescence notices or end-of-life notifications from Vishay to ensure long-term supply stability for production runs.

Selection Notes

Select this part for applications requiring a compact P-channel solution with low conduction losses. Ensure the thermal design accommodates the specified power dissipation limits within the target operating environment. Verify that the gate drive voltage aligns with the threshold characteristics to guarantee full enhancement and minimal resistance during operation.

Part Context

This component belongs to the SI3 series of power MOSFETs from Vishay Siliconix. The series is characterized by the use of advanced trench gate technology to achieve high density and low resistance. The SI3983DV specifically targets space-constrained designs requiring robust switching capabilities in a small outline package.

Replacement Considerations

SI3983DV-GE3