SI3993CDV-T1-GE3

Overview

The Vishay Siliconix SI3993CDV-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and a maximum continuous drain current of -2.9 A at TC = 25 °C. The on-state resistance is specified as 0.111 Ω max at VGS = -10 V and 0.188 Ω max at VGS = -4.5 V. Total gate charge is typically 2.7 nC at VGS = -4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in a TSOP-6 surface-mount package.

Feature Summary

• TrenchFET power MOSFET architecture
• Dual P-channel configuration
• Lead-free and halogen-free construction

Applications

• Load switch for portable applications
• Battery switch for portable devices
• Bus switch for computers
• Load switch for computers

Procurement Notes

Verify the component against official Vishay datasheet specifications before integration. Confirm that the TSOP-6 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient and junction-to-foot thermal resistances under expected operating conditions.

Selection Notes

Select this component when a dual P-channel solution is required for low-voltage switching applications. Evaluate the on-resistance requirements at specific gate drive voltages, particularly if operating near the -4.5 V threshold. Consider the thermal dissipation capabilities relative to the ambient environment and available copper area for heat spreading.

Part Context

This part belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the power MOSFET category. It utilizes the TSOP-6 package variant designed for surface mounting. The product line emphasizes high reliability through 100% Rg testing and compliance with material categorization standards.

Replacement Considerations

No public confirmed substitute part numbers are documented.