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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 1.8A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.8A
- Rds On (Max) @ Id, Vgs：133mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3993DV-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a TSOP-6 surface-mount package designed for low-power applications. The device features a drain-source voltage rating of -20V and a continuous drain current capability of -5.7A. Key electrical parameters include a maximum on-resistance of 28 milliohms at a gate-source voltage of -10V, ensuring efficient conduction. The component operates within a temperature range from -55°C to +150°C junction temperature, with a power dissipation rating of 1.4W.
Feature Summary
- TrenchFET technology provides optimized on-resistance and switching performance.
- TSOP-6 package enables compact surface-mount integration.
- Enhanced mode operation supports standard logic-level control.
Applications
- Power management circuits requiring P-channel switching
- Battery protection modules
- Low-side or high-side load switches
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure that the TSOP-6 footprint matches your PCB layout requirements before finalizing procurement orders.
Selection Notes
Select this component when a P-channel MOSFET with -20V breakdown and approximately -5.7A current capacity is required in a small TSOP-6 package. Compare the 28 milliohm on-resistance against system thermal constraints to ensure adequate heat dissipation without additional heatsinking.
Part Context
This part belongs to the Vishay Siliconix SI3 series of N- and P-channel enhancement mode field effect transistors. The series is characterized by low on-resistance and fast switching speeds, making it suitable for general-purpose power switching applications in consumer and industrial electronics.
Replacement Considerations
Consult official Vishay cross-reference guides for verified substitutes. Potential alternatives may include other -20V P-channel MOSFETs in TSOP-6 packages with comparable current ratings and on-resistance values.
