SI4010DY-T1-GE3

Single FETs, MOSFETs Overview

The SI4010DY-T1-GE3 is a Vishay Siliconix N-channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of +20 V / -16 V. The device supports a continuous drain current (ID) of 31.3 A at TC = 25 °C. Maximum on-state resistance (RDS(on)) is specified as 0.0034 Ω at VGS = 10 V and 0.0044 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 22.5 nC at VGS = 10 V. Thermal resistance from junction to foot (RthJF) has a maximum steady-state value of 21 °C/W.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET architecture for optimized performance
• Verified 100% gate resistance and unclamped inductive switching (UIS) testing
• Lead-free and halogen-free material categorization

Single FETs, MOSFETs Applications

• Synchronous rectification
• DC/DC conversion
• Telecom and server systems
• Industrial applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-T1-GE3' against official documentation to confirm reel packaging and compliance status. Confirm that the component meets RoHS and REACH requirements as defined by Vishay. Ensure the requested quantity aligns with standard factory packaging multiples. Validate that the application environment remains within the specified operating temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications requiring efficient switching. The 30 V rating suits 5 V and 12 V bus architectures. Evaluate thermal management needs based on the 21 °C/W junction-to-foot resistance. Consider the 100% UIS test history for circuits prone to inductive load spikes. Verify gate drive voltage compatibility with the specified RDS(on) thresholds.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI4 series of N-channel MOSFETs. It utilizes the SO-8 surface-mount package for compact integration. The device is manufactured using silicon technology and is designed for general-purpose power switching. The 'GE3' designation indicates lead-free and halogen-free construction compliant with environmental standards.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without validating pinout, electrical ratings, and thermal characteristics. Verify that any alternative component matches the SO-8 footprint and meets the required 30 V and 31.3 A specifications.