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SI4128DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 10.9A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4128DY-T1-E3
- Description：MOSFET N-CH 30V 10.9A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：435 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4128DY-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI4128DY-T1-E3 is a lead-free N-Channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum continuous drain current of 10.9 A at 25 °C case temperature, with a typical total gate charge of 3.8 nC. Operating junction temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture
- Lead-free construction compliant with IEC 61249-2-21
- 100% Rg tested for reliability
Single FETs, MOSFETs Applications
- Notebook PC system power
- Load switch applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS requirements and matches the exact manufacturer part number. Ensure compatibility with the intended thermal management strategy and verify all electrical parameters against the latest datasheet specifications.
Single FETs, MOSFETs Selection Notes
Select this component based on its 30 V breakdown voltage and low gate charge characteristics suitable for efficient switching. Evaluate the thermal resistance ratings and power dissipation limits relative to the expected operating environment. Consider the SO-8 package dimensions for PCB layout constraints and ensure adequate heatsinking if operating near maximum current ratings.
Single FETs, MOSFETs Part Context
This component belongs to the Si4128DY series manufactured by Vishay Siliconix. It is designed as a high-performance N-Channel MOSFET for general-purpose switching applications. The product utilizes advanced TrenchFET technology to achieve low on-resistance and fast switching speeds within a compact surface-mount package.
Single FETs, MOSFETs Replacement Considerations
SI4128DY-T1-GE3
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current at a case temperature of 25 °C?
The maximum continuous drain current is 10.9 A when the case temperature is maintained at 25 °C.
Does the SI4128DY-T1-E3 meet halogen-free standards?
Yes, the component is available in a halogen-free version according to IEC 61249-2-21.
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