SI4128DY-T1-GE3

$0.73

Description：MOSFET N-CH 30V 10.9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4cc1e19693aa Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4128DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 10.9A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4128DY-T1-GE3

Description：MOSFET N-CH 30V 10.9A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：435 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4128DY-T1-GE3

SI4128DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4128DY-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 10.9 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.024 Ω at VGS = 10 V and 7.8 A. Total gate charge is typically 3.8 nC at VGS = 10 V. Operating junction temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 5 W at TC = 25 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Power MOSFET technology for optimized performance
Halogen-free construction according to IEC 61249-2-21
100% Rg tested for reliability

Single FETs, MOSFETs Applications

Notebook PC system power
Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T1-GE3' against official documentation to confirm lead-free and halogen-free status. Ensure the component matches the SO-8 narrow package dimensions specified in datasheet document number 71192. Confirm that the manufacturer source aligns with Vishay Siliconix specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching applications requiring high efficiency. The low gate charge supports fast switching speeds suitable for portable electronics. Evaluate thermal management requirements based on the 5 W power dissipation limit at 25 °C case temperature. Verify that the 30 V drain-source voltage provides adequate margin for the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI4 series of N-channel MOSFETs. It is designed as a direct replacement for the Si4128DY variant, specifically incorporating the 'GE3' suffix to denote compliance with RoHS3 standards and halogen-free manufacturing processes. The device is manufactured using silicon technology.