SI4190DY-T1-GE3

$2.00

Description：MOSFET N-CH 100V 20A 8-SOIC
Series：-
Mfr：Vishay Siliconix
Package：Cut Tape (CT)

SKU:821a395a239f Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4190DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 20A 8-SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4190DY-T1-GE3

Description：MOSFET N-CH 100V 20A 8-SOIC
Series：-
Mfr：Vishay Siliconix
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4190DY-T1-GE3

SI4190DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4190DY-T1-GE3 is a single N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 20 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.0088 Ω at VGS = 10 V and 0.012 Ω at VGS = 4.5 V. Total gate charge is typically 38.6 nC at VGS = 10 V. Thermal performance includes a junction-to-foot resistance of 13 °C/W and a junction-to-ambient resistance of 29 °C/W.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance
Features 100% gate resistance and unclamped inductive switching (UIS) testing
Constructed to be halogen-free according to IEC 61249-2-21 definition

Single FETs, MOSFETs Applications

DC/DC primary side switching
Telecom and server systems
Industrial applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component matches the exact Vishay datasheet number 66595. Ensure compatibility with standard SO-8 footprint dimensions during PCB layout. Validate thermal management requirements based on the specified junction-to-ambient and junction-to-foot resistance values for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 100 V with low conduction losses. Consider the 20 A continuous current capability when designing for 25 °C case temperatures. Evaluate the gate charge specifications for driver selection in switching applications. Review the safe operating area curves to ensure operation remains within thermal limits under varying duty cycles and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4190DY series of N-channel MOSFETs. It is manufactured using silicon technology and packaged in an 8-lead SOIC body. The product complies with RoHS Directive 2002/95/EC. It is designed for general-purpose power switching applications where low on-resistance and robust avalanche energy ratings are required.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for qualified alternative part numbers. Verify pinout compatibility and electrical parameter overlap before substitution.