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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8.5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.5A
- Rds On (Max) @ Id, Vgs：19.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4214DDY-T1-E3 is a dual N-channel enhancement mode power MOSFET utilizing TrenchFET technology. It features an SO-8 surface-mount package with eight pins. The device provides a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 8.5 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.0195 Ω at VGS = 10 V and 0.023 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 22 nC at VGS = 10 V. Maximum power dissipation is 3.1 W at TC = 25 °C, with an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration in a compact SO-8 package
- TrenchFET power MOSFET architecture for optimized performance
- Validated through 100% Rg and UIS testing
Applications
- Notebook system power management
- Low current DC/DC conversion circuits
Procurement Notes
Verify the component against official datasheet document number 67907 to confirm technical specifications. Ensure the ordering suffix matches the lead-free requirement specified by the E3 designation. Cross-reference pinout details and thermal characteristics with manufacturer documentation before integration into designs.
Selection Notes
Evaluate the 30 V drain-source voltage rating against circuit requirements. Consider the 8.5 A continuous current capability and the specific RDS(on) values at different gate voltages. Assess thermal management needs based on the maximum power dissipation limits and junction-to-ambient thermal resistance ratings provided in the specifications.
Part Context
This component belongs to the Vishay TrenchFET series of power MOSFETs. It is designed as a dual N-channel device within the SOIC family, offering high efficiency and low on-resistance. The part integrates two independent channels in a single surface-mount package for space-constrained applications.
Replacement Considerations
SI4214DDY-T1-GE3
FAQ
What is the typical total gate charge (Qg) at VGS = 10 V?
The typical total gate charge is 22 nC when tested at VDS = 15 V, VGS = 10 V, and ID = 8 A.
What are the absolute maximum ratings for Drain-Source Voltage?
The absolute maximum Drain-Source Voltage (VDS) is rated at 30 V.
Is the device compliant with RoHS directives?
Yes, the Si4214DDY-T1-E3 is compliant with the RoHS Directive 2002/95/EC.
