ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8.5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.5A
- Rds On (Max) @ Id, Vgs：19.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI4214DDY-T1-E3 is a dual N-Channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 8.5 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.0195 Ω at VGS = 10 V and 0.023 Ω at VGS = 4.5 V. Total gate charge (Qg) is 14.5 nC at VGS = 10 V and 7.1 nC at VGS = 4.5 V. Maximum power dissipation is 3.1 W at TC = 25 °C. Operating junction temperature ranges from -55 °C to 150 °C.
Feature Summary
- Dual N-Channel configuration with independent channel control within a single SO-8 package.
- TrenchFET Power MOSFET architecture providing low on-state resistance and optimized switching performance.
- Validated for 100% Rg testing and 100% Unclamped Inductive Switching (UIS) capability.
Applications
- Notebook system power distribution
- Low current DC/DC converter circuits
Procurement Notes
Verify the exact ordering suffix against official documentation. The provided datasheet references SI4214DDY-T1-E3. Confirm that the requested GE3 suffix aligns with the manufacturer's current lead-free designation standards and does not alter electrical characteristics or packaging specifications before finalizing procurement.
Selection Notes
Select this component for applications requiring two isolated N-Channel switches in a compact footprint. Ensure thermal management accounts for the maximum junction-to-ambient thermal resistance of 62.5 °C/W when operating without additional heatsinking. Validate gate drive voltages against the specified RDS(on) conditions for optimal efficiency.
Part Context
This device belongs to the Vishay Siliconix SI4 series of dual MOSFETs. It is designed specifically for space-constrained portable electronics where multiple switching elements are required. The SO-8 narrow package allows for standard surface mount assembly while maintaining robust thermal performance relative to its small physical dimensions.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic replacements must match the 30 V rating, dual N-Channel topology, and SO-8 pinout compatibility. Verify thermal resistance and gate charge parameters to ensure equivalent circuit performance.
