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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：790pF @ 12.5V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4228DY-T1-GE3 is a dual N-channel power MOSFET utilizing TrenchFET technology. It features a 25 V drain-source voltage rating and an 8 A continuous drain current capacity. The device offers low on-state resistance, with maximum values of 0.018 Ω at VGS = 10 V, 0.020 Ω at VGS = 4.5 V, and 0.024 Ω at VGS = 2.5 V. Total gate charge is typically 7.8 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a lead-free SO-8 package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET power MOSFET structure for optimized performance
- 100% tested for gate resistance and single pulse avalanche capability
Applications
- Synchronous buck converter circuits
- DC/DC converter implementations
Procurement Notes
Verify the component against official Vishay datasheet specifications before integration. Confirm that the SO-8 package dimensions and pinout align with your PCB layout requirements. Ensure thermal management strategies account for the specified junction-to-ambient and junction-to-foot thermal resistances under expected operating conditions.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The low gate charge supports efficient switching in high-frequency converters. Evaluate the on-resistance characteristics at your specific gate drive voltage to ensure adequate current handling and thermal performance for your design constraints.
Part Context
This part belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. It is designed as a lead-free and halogen-free alternative within the company's discrete semiconductor portfolio. The device is intended for surface-mount assembly on standard FR4 substrates.
Replacement Considerations
Consult the manufacturer's documentation for direct cross-reference recommendations. Verify compatibility regarding pinout, voltage ratings, and thermal characteristics if substituting with other dual N-channel MOSFETs.
