SI4286DY-T1-GE3

Overview

The Vishay Siliconix SI4286DY-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET Gen III technology. It features a 40 V drain-source voltage rating and supports a maximum continuous drain current of 7 A at a case temperature of 25 °C. The device offers a typical on-state resistance of 0.0325 Ω at VGS = 10 V and 0.040 Ω at VGS = 4.5 V. Total gate charge is typically 6.8 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C, housed in an SO-8 surface-mount package.

Feature Summary

• Dual N-channel configuration with independent gate, drain, and source terminals for each channel.
• TrenchFET Gen III power MOSFET structure designed for low on-resistance and fast switching performance.
• Manufactured using halogen-free materials compliant with IEC 61249-2-21 standards.

Applications

• DC/DC converter circuits
• External hard disk drive (HDD) power management
• Notebook system power distribution

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component matches the exact Vishay datasheet number 67599. Ensure the received parts are genuine Vishay Siliconix products by checking markings and packaging integrity before integration into designs.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The SO-8 package provides a balance between thermal dissipation and board space efficiency. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal conduction losses.

Part Context

This part belongs to the Vishay Siliconix SI4 series of power MOSFETs. The 'T1' designation indicates tape-and-reel packaging suitable for automated assembly processes. The 'GE3' suffix denotes RoHS compliance and halogen-free construction, adhering to environmental directives for electronic components.

Replacement Considerations

Direct pin-compatible replacements within the same family include the SI4286DY without the T1-GE3 suffix for bulk packaging needs. Other dual N-channel MOSFETs in the SO-8 package should be evaluated based on matching VDS ratings and RDS(on) specifications to ensure circuit compatibility.