SI4310BDY-T1-E3

SI4310BDY-T1-E3

$1.32
  • Description:MOSFET 2N-CH 30V 7.5A 14SOIC
  • Series:TrenchFET®

SKU:6fe9b2055880 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 7.5A 14SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7.5A, 9.8A
  • Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:2370pF @ 15V
  • Power - Max:1.14W, 1.47W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:14-SOIC
  • Grade:-
  • Qualification:-

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SI4310BDY-T1-E3

Overview

The SI4310BDY-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix. It features a 30V drain-source breakdown voltage and supports continuous drain currents of 7.5A and 9.8A. The device integrates Schottky diodes and utilizes TrenchFET technology for enhanced performance. Packaged in a 14-SOIC surface-mount format, it offers low on-resistance values of 1.14W and 1.47W under specific conditions. This component is designed for efficient power switching applications requiring compact dual-channel solutions.

Feature Summary

  • Integrates dual N-channel MOSFETs with built-in Schottky diodes
  • Utilizes TrenchFET technology for optimized power handling
  • Provides high current capability within a compact 14-SOIC package

Applications

  • Power management circuits requiring dual channel switching
  • Battery protection systems utilizing integrated diode functionality
  • DC-DC converter topologies needing compact dual-MOSFET solutions

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary markets as standard supply may be limited. Ensure compatibility with existing design specifications given the end-of-life designation. Cross-reference datasheet parameters against current project requirements to validate technical suitability despite lifecycle changes.

Selection Notes

Select this component when dual N-channel switching with integrated Schottky protection is required in a 14-SOIC footprint. Consider its 30V rating and specific current capabilities for low-voltage power applications. Evaluate thermal performance characteristics relative to system constraints. Verify that the obsolete status does not conflict with long-term production requirements or supply chain stability needs.

Part Context

This part belongs to Vishay Siliconix's discrete semiconductor product line, specifically within the MOSFET arrays category. It represents a specialized solution combining two N-channel devices with protective diodes. The 14-SOIC packaging allows for surface-mount integration in space-constrained designs. As an obsolete item, it reflects historical design choices for dual-channel power management applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, alternative components must be identified through independent engineering analysis. Verify pinout compatibility and electrical parameter equivalence when selecting replacement parts from other manufacturers.

SI4310BDY-T1-E3SI4310BDY-T1-E3
$1.32
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