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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.6A
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si4330DY is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage of 30 V and a maximum continuous drain current of 8.7 A at 25 °C. The on-state resistance is specified as 16.5 mΩ at VGS = 10 V and 22 mΩ at VGS = 4.5 V. Operating junction temperatures range from -55 °C to +150 °C, with a typical junction-to-ambient thermal resistance of 85 °C/W under steady-state conditions.
Feature Summary
- Dual N-channel configuration within a single surface-mount package
- TrenchFET power MOSFET architecture for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Notebook computer load switching
- DC/DC conversion circuits
- Auxiliary voltage regulation
Procurement Notes
Verify the specific ordering suffix when sourcing components. The Si4330DY-T1-E3 designation indicates lead-free manufacturing, whereas the Si4330DY-T1-GE3 variant includes halogen-free compliance. Confirm that the required revision matches the design specifications before procurement.
Selection Notes
Evaluate the thermal resistance characteristics against the expected ambient temperature and duty cycle. Ensure the gate drive voltage meets the minimum threshold for the desired on-resistance level. Verify that the package mounting area provides adequate heat dissipation for the calculated power dissipation requirements.
Part Context
This component belongs to the Vishay Siliconix Si4330 series of dual N-channel MOSFETs. It is designed for applications requiring two independent channels in a compact footprint. The device utilizes advanced TrenchFET technology to achieve low on-state resistance and efficient switching capabilities.
Replacement Considerations
The Si4330DY-T1-GE3 serves as a direct functional replacement for the Si4330DY-T1-E3, differing primarily in halogen-free certification. Cross-referencing pinouts and absolute maximum ratings is essential when substituting with other dual MOSFET packages.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 8.7 A at an ambient temperature of 25 °C.
How does the on-state resistance vary with gate voltage?
The on-state resistance is 16.5 mΩ at VGS = 10 V and increases to 22 mΩ at VGS = 4.5 V.
Is this component suitable for high-temperature environments?
Yes, the operating junction temperature range extends up to +150 °C.
