SI4330DY-T1-GE3

Overview

The Vishay Siliconix SI4330DY-T1-GE3 is a dual N-channel Power MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and an SO-8 surface-mount package. The device provides two independent channels with a maximum continuous drain current of 8.7 A at 25 °C. On-state resistance is specified as 16.5 mΩ at VGS = 10 V and 22 mΩ at VGS = 4.5 V, both measured at ID = 8.7 A. Total gate charge is typically 13 nC at VDS = 15 V. Thermal performance includes a junction-to-ambient resistance of 85 °C/W under steady-state conditions.

Feature Summary

• Dual N-channel configuration in a single SO-8 package
• TrenchFET power MOSFET technology for low on-resistance
• Halogen-free construction compliant with IEC 61249-2-21

Applications

• Notebook load switches
• DC/DC conversion circuits
• Auxiliary voltage regulation

Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The -E3 suffix indicates lead-free status, while the -GE3 suffix confirms both lead-free and halogen-free attributes according to IEC standards. Confirm availability directly with authorized distributors or the manufacturer, as supply status may vary by region and production lot.

Selection Notes

Select this component for applications requiring dual isolated N-channel switching within a compact footprint. Ensure the operating junction temperature remains within the -55 °C to 150 °C range. Verify that the thermal design accommodates the specified junction-to-ambient resistance values for the intended duty cycle and ambient temperature conditions.

Part Context

This part belongs to the Vishay Siliconix Si4330 series of dual N-channel MOSFETs. It shares the same die and electrical specifications as the SI4330DY-T1-E3 variant, differing only in the environmental compliance designation. Both variants utilize the standard SO-8 surface-mount package designed for high-density PCB layouts.

Replacement Considerations

The SI4330DY-T1-E3 serves as a direct functional replacement for the SI4330DY-T1-GE3, maintaining identical electrical characteristics and pinout compatibility. Substitution requires verification of halogen-free compliance if mandated by the specific application regulations.

FAQ

What is the difference between the SI4330DY-T1-E3 and SI4330DY-T1-GE3?

Both parts share identical electrical specifications and packaging. The -E3 suffix denotes a lead-free product, whereas the -GE3 suffix indicates the device is both lead-free and halogen-free according to IEC 61249-2-21.

How is the dual channel configured in the SO-8 package?

The package contains two independent N-channel MOSFETs. Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 1, Pin 4 is Source 2, Pin 5 is Gate 2, Pin 6 is Drain 2, Pin 7 is Source 2 (common), and Pin 8 is Drain 2 (common).

What is the typical total gate charge for this device?

The typical total gate charge (Qg) is 13 nC, measured at a drain-source voltage of 15 V, a gate-source voltage of 4.5 V, and a drain current of 8.7 A.