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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7.3A 14SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.3A, 9.9A
- Rds On (Max) @ Id, Vgs：12mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.14W, 1.43W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：14-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4340DY-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix, featuring an integrated Schottky diode. It operates with a drain-source voltage of 20 V and supports continuous drain currents of 7.3 A and 9.9 A for its respective channels. The device utilizes TrenchFET technology to achieve low on-resistance and is housed in a 14-SOIC surface-mount package. Power dissipation ratings are specified at 1.14 W and 1.43 W per channel under standard conditions.
Feature Summary
- Integrates two independent N-channel MOSFETs within a single compact package
- Includes a built-in Schottky diode for efficient freewheeling current paths
- Utilizes TrenchFET technology to minimize conduction losses
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Low-voltage power management systems
Procurement Notes
Verify the specific suffix E3 confirms lead-free compliance and RoHS standards before procurement. Confirm that the 14-SOIC package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the specified power dissipation limits during operation. Cross-reference the manufacturer datasheet for accurate handling and storage sensitivity classifications.
Selection Notes
Select this component when space constraints require dual MOSFET functionality in a small form factor. The integrated Schottky diode simplifies circuit design by eliminating external components. Consider the 20 V rating to ensure adequate headroom for the target application voltage. Evaluate thermal performance needs against the package's heat dissipation capabilities.
Part Context
This part belongs to the SI4 series of MOSFET arrays from Vishay Siliconix. It represents a specialized solution for applications requiring multiple switching elements in close proximity. The integration of the Schottky diode distinguishes it from standard dual MOSFET packages without diode options.
Replacement Considerations
Consult official Vishay documentation for direct cross-references. Verify pin compatibility and electrical specifications before substituting with other dual MOSFET arrays.
