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SI4354DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 9.5A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4354DY-T1-E3
- Description：MOSFET N-CH 30V 9.5A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4354DY-T1-E3
Single FETs, MOSFETs Overview
The SI4354DY-T1-E3 is an N-channel Power MOSFET from the Vishay Siliconix SI4 series, utilizing TrenchFET technology. It features a 30V drain-source voltage rating and a continuous drain current of 9.5A at ambient temperature. The device is housed in an SOIC-8 (SO-8) surface-mount package with a maximum power dissipation of 2.5W at Ta. Key electrical characteristics include a low on-resistance optimized for efficient switching applications.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for enhanced performance
- Designed for high-efficiency switching applications
- Optimized low on-resistance for reduced conduction losses
Single FETs, MOSFETs Applications
- DC-DC converters
- Power management circuits
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix E3 confirms RoHS compliance when sourcing. Confirm the T1 designation indicates reel packaging for automated assembly. Cross-reference the manufacturer part number against official datasheets to ensure compatibility with design specifications before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 30V N-channel MOSFET in an SOIC-8 package. Evaluate thermal constraints as the power dissipation is rated at 2.5W at ambient temperature. Ensure the gate drive voltage aligns with the device's threshold requirements for optimal switching efficiency.
Single FETs, MOSFETs Part Context
This component belongs to the SI4 series of single N-channel MOSFETs manufactured by Vishay Siliconix. The series is characterized by the use of advanced TrenchFET process technology, which provides superior on-resistance and switching performance compared to standard planar technologies within similar voltage ratings.
Single FETs, MOSFETs Replacement Considerations
Officially documented recommended alternatives include the SI4654DY-T1-E3 and SI4378DY-T1-E3. Verify pinout compatibility and electrical parameter margins when substituting these parts in existing designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
