SI4388DY-T1-E3

Overview

The Vishay Siliconix Si4388DY-T1-E3 is a dual N-channel 30-V (D-S) MOSFET integrated with a Schottky diode in an SO-8 package. Channel-1 features a maximum on-resistance of 0.016 Ω at VGS = 10 V and a continuous drain current of 10.7 A. Channel-2 has a maximum on-resistance of 0.015 Ω at VGS = 10 V and a continuous drain current of 11.3 A. The integrated Schottky diode supports a forward current of 2.0 A with a typical forward voltage of 0.43 V. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Integrates two independent N-channel MOSFETs and a Schottky diode in a single compact surface-mount package.
• Utilizes TrenchFET power MOSFET technology for optimized switching performance and low conduction losses.
• Includes an integrated fast-recovery Schottky diode suitable for synchronous rectification applications.

Applications

• CCFL Inverter circuits
• Notebook Logic DC/DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist between standard lead-free and halogen-free configurations. Confirm that the component meets IEC 61249-2-21 standards if halogen-free compliance is required for the target assembly process.

Selection Notes

Select this component when a combined solution for high-side or low-side switching and synchronous rectification is needed in space-constrained designs. Ensure the thermal management strategy accounts for the specified junction-to-ambient resistance ratings under the expected duty cycle conditions.

Part Context

This part belongs to the Vishay Siliconix Si4 series of power MOSFETs. It is specifically designed to provide a compact footprint for power management applications requiring multiple switching elements and a freewheeling path within a single SO-8 package.

Replacement Considerations

Si4388DY-T1-GE3 is documented as a lead-free and halogen-free variant of the same functional device.