SI4388DY-T1-GE3

Description：MOSFET 2N-CH 30V 10.7A 8SOIC
Series：TrenchFET®

SKU:f32a39291556 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 10.7A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10.7A, 11.3A
Rds On (Max) @ Id, Vgs：16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：946pF @ 15V
Power - Max：3.3W, 3.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4388DY-T1-GE3

Overview

The Vishay Siliconix SI4388DY-T1-GE3 is a dual N-channel 30-V MOSFET with an integrated Schottky diode in an SO-8 package. Channel-1 features a maximum RDS(on) of 0.016 Ω at VGS = 10 V and a continuous drain current (ID) of 10.7 A at TC = 25 °C. Channel-2 has a maximum RDS(on) of 0.015 Ω at VGS = 10 V and an ID of 11.3 A at TC = 25 °C. The integrated Schottky diode supports a forward current (IF) of 2.0 A with a forward voltage (VSD) of 0.43 V at IF = 2.0 A. Total gate charge (Qg) for Channel-1 is typically 27 nC at VGS = 10 V, while Channel-2 is typically 62 nC under the same conditions.

Feature Summary

Dual N-channel MOSFETs combined with a Schottky diode in a single SO-8 surface-mount package
TrenchFET power technology providing low on-state resistance and optimized switching performance
Integrated Schottky diode offering fast reverse recovery characteristics for synchronous rectification

Applications

CCFL Inverter circuits
Notebook Logic DC/DC converters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for Halogen-free certification according to IEC 61249-2-21 standards. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to soldering.

Selection Notes

Evaluate thermal management requirements based on junction-to-ambient resistance values provided in the datasheet. Compare total gate charge specifications against driver capabilities to ensure adequate switching speeds. Verify that the integrated Schottky diode's forward current rating meets the specific load requirements of the target application circuit.

Part Context

This component belongs to the Vishay TrenchFET family, utilizing advanced silicon planar technology. It is designed for high-efficiency power switching applications where compact packaging and low conduction losses are critical. The integration of the Schottky diode reduces overall system component count and board space requirements.

Replacement Considerations

SI4388DY-T1-E3

FAQ

What is the maximum gate-source voltage rating for Channel-2?

The absolute maximum gate-source voltage (VGS) for Channel-2 is ±12 V.

How does the on-resistance of Channel-2 compare to Channel-1?

Channel-2 exhibits a slightly lower maximum on-resistance (RDS(on)) of 0.015 Ω compared to Channel-1's 0.016 Ω when measured at VGS = 10 V and ID = 8 A.