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SI4465ADY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 8V 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4465ADY-T1-E3
- Description：MOSFET P-CH 8V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：13.7A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：9mOhm @ 14A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 6.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4465ADY-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI4465ADY-T1-E3 is a P-Channel enhancement mode MOSFET utilizing TrenchFET technology. It features an 8 V drain-source voltage rating and a continuous drain current of -13.7 A at 25 °C. The device achieves a low on-state resistance of 9 mΩ at VGS = -4.5 V, with a maximum gate threshold voltage of 1.0 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET power MOSFET technology for optimized performance
- Engineered for low-voltage operation with a 1.8 V rated gate threshold
- Includes 100% Rg testing to ensure consistent switching characteristics
Single FETs, MOSFETs Applications
- Low-side load switches
- Power management circuits
- Battery protection systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates lead-free construction, while GE3 denotes both lead-free and halogen-free compliance according to IEC 61249-2-21 standards. Confirm that the selected variant matches the required environmental specifications for the intended application.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling in low-voltage environments. Ensure the gate drive voltage meets the minimum requirements for optimal RDS(on) performance. Evaluate thermal dissipation capabilities based on the specific ambient temperature and mounting conditions to maintain safe operating junction temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si4465 series of P-Channel MOSFETs. It is designed as a direct replacement for standard logic-level FETs in compact designs. The SO-8 package provides a balance between current capacity and board space efficiency for modern electronic assemblies.
Single FETs, MOSFETs Replacement Considerations
The SI4465ADY-T1-GE3 serves as a verified alternative offering halogen-free compliance. Both variants share identical electrical characteristics and pin configurations, allowing for drop-in substitution without circuit redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
