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SI4488DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 150V 3.5A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI4488DY-T1-E3
- Description：MOSFET N-CH 150V 3.5A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for SI4488DY-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix Si4488DY-T1-E3 is a lead-free N-channel MOSFET utilizing TrenchFET technology. It features a 150 V drain-source voltage rating and a maximum continuous drain current of 5.0 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.050 Ω at VGS = 10 V. Packaged in an SO-8 surface-mount housing, it supports an operating junction temperature range from -55 to 150 °C.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET power MOSFET architecture for optimized performance
- Compliant with RoHS Directive 2002/95/EC standards
- Manufactured using halogen-free materials per IEC 61249-2-21 definition
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power switching applications
- Load switch implementations
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches project requirements. The -T1-E3 designation indicates lead-free construction. Confirm package type and pinout alignment with PCB layout specifications. Ensure thermal management design accounts for steady-state and transient thermal resistance values provided in the datasheet to maintain junction temperatures within safe operating limits during operation.
Single FETs, MOSFETs Selection Notes
Select this component when a 150 V breakdown voltage and low on-resistance are required for high-efficiency switching. The SO-8 package suits space-constrained surface-mount designs. Evaluate thermal dissipation capabilities against expected load currents and ambient conditions. Verify gate drive voltage compatibility with the specified threshold and on-state resistance test conditions for optimal conduction performance.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si4488 series of N-channel MOSFETs. The series utilizes TrenchFET technology to achieve low on-state resistance. The Si4488DY variant specifically offers a 150 V rating and 5.0 A continuous current capability in an SO-8 package. It is designed for general-purpose power switching and DC-DC conversion applications requiring efficient thermal management.
Single FETs, MOSFETs Replacement Considerations
Cross-reference electrical parameters such as VDS, RDS(on), and package dimensions with alternative suppliers. Verify that substitute components meet or exceed the 150 V rating and 5.0 A current capacity. Ensure thermal resistance characteristics align with existing board designs to prevent overheating.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
