SI4500BDY-T1-GE3

Overview

The SI4500BDY-T1-GE3 is a complementary MOSFET half-bridge component manufactured by Vishay Siliconix. It integrates an N-channel and a P-channel enhancement-mode field-effect transistor within a single SOIC-8 surface-mount package. The device features a drain-source voltage rating of 20 V and a continuous drain current capacity of 7 A. Key electrical parameters include a maximum on-resistance of 22 mOhms, tested at a gate-source voltage of 4.5 V. The unit operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Integrates complementary N-channel and P-channel transistors in a single package for simplified circuit design
• Utilizes TrenchFET technology to achieve low on-resistance and efficient power switching
• Supports surface-mount installation via an SOIC-8 footprint for automated assembly processes

Applications

• DC-DC converter circuits requiring synchronous rectification
• Motor driver interfaces for controlling brushless or brushed DC motors
• Power management modules in portable electronic devices

Procurement Notes

Verify the specific ordering suffix to ensure compliance with environmental standards. The GE3 designation indicates lead-free and halogen-free construction, whereas other suffixes may denote different material compositions. Confirm that the requested variant matches the exact RoHS and REACH requirements for your manufacturing process before finalizing procurement orders.

Selection Notes

Select this component when space constraints necessitate a dual-transistor solution within a standard SOIC-8 package. The 20 V rating suits low-voltage logic-level applications. Ensure the thermal design accommodates the power dissipation limits inherent to the small outline package. This part is suitable for designs prioritizing integration over discrete component flexibility.

Part Context

This component belongs to the Vishay Siliconix complementary MOSFET family, designed specifically for half-bridge configurations. It replaces discrete N-channel and P-channel pairs, reducing board space and parasitic inductance. The product line targets high-efficiency power conversion systems where compact form factors and reliable switching performance are critical engineering requirements.

Replacement Considerations

Direct substitutes include the SI4500BDY-T1-E3 variant, which shares identical electrical characteristics but differs in environmental certification. Cross-referencing pinout compatibility and thermal resistance values is essential when evaluating alternative manufacturers' complementary MOSFET packages.