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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/8V 12A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V, 8V
- Current - Continuous Drain (Id) @ 25°C：12A, 8A
- Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：805pF @ 15V
- Power - Max：4.5W, 3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4501BDY-T1-GE3 is a complementary N- and P-channel MOSFET pair in an SO-8 package. The N-channel device features a drain-source voltage of 30 V, continuous drain current of 12 A at TC = 25 °C, and on-resistance of 0.017 Ω at VGS = ± 10 V. The P-channel device has a drain-source voltage of -8 V, continuous drain current of -8 A at TC = 25 °C, and on-resistance of 0.027 Ω at VGS = ± 10 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- TrenchFET power MOSFET technology
- Complementary N- and P-channel configuration
- 100% Rg and UIS tested
Applications
- Level shift
- Load switch
Procurement Notes
Verify the component against official Vishay datasheet specifications before integration. Confirm that the SO-8 package dimensions and pinout match the design requirements. Ensure thermal management strategies align with the specified junction-to-ambient and junction-to-foot thermal resistance ratings for the intended operating environment.
Selection Notes
Select this dual MOSFET when a matched N- and P-channel pair is required in a compact SO-8 footprint. Consider the specific voltage ratings, noting the asymmetry between the 30 V N-channel and 8 V P-channel devices. Evaluate gate charge and on-resistance values to ensure compatibility with the driving circuitry and efficiency targets.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family, utilizing advanced planar technology to achieve low on-resistance. The SO-8 package provides a surface-mount solution suitable for automated assembly processes. The complementary nature of the N- and P-channel devices allows for efficient implementation in push-pull or half-bridge configurations.
Replacement Considerations
Direct replacement requires verifying pin compatibility and electrical parameters. Alternative complementary MOSFET pairs in SO-8 packages may be considered if they meet the voltage, current, and thermal requirements. Ensure any substitute maintains similar gate charge characteristics to preserve switching performance.
