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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 7.2A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.2A, 4.6A
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4511DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, designed for surface-mount applications in the SO-8 package. It features a drain-source voltage rating of -30 V and a continuous drain current of -27 A at 25°C. The device utilizes TrenchFET technology to achieve a low on-resistance of 16 mΩ at a gate-source voltage of -10 V. It operates within a junction temperature range of -55°C to +175°C and supports a power dissipation of 69 W. The component is RoHS compliant and suitable for general-purpose switching and load management tasks.
Feature Summary
- Utilizes advanced TrenchFET technology to minimize on-resistance and improve switching efficiency.
- Engineered with an enhanced source-drain diode characterized by low reverse recovery charge and fast transition times.
- Constructed with lead-free tin plating on terminals to ensure compatibility with standard soldering processes.
Applications
- High-side load switches in industrial control systems
- Power distribution units requiring efficient P-channel regulation
- DC-DC converter input protection circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm terminal finish and packaging configuration. Ensure that the requested part number matches the exact electrical specifications required for the target circuit design before finalizing procurement.
Selection Notes
Select this component when a P-channel MOSFET with a -30 V rating and high current capacity is required. Compare the 16 mΩ on-resistance against thermal constraints to determine if adequate heat sinking is necessary for the intended duty cycle and ambient temperature conditions.
Part Context
This part belongs to the SI45xx series of Vishay Siliconix P-channel MOSFETs. The series is characterized by low on-resistance and robust performance in surface-mount packages. The SI4511 variant specifically targets applications needing higher current handling capabilities compared to lower-rated counterparts in the same family.
Replacement Considerations
Consult the official Vishay Siliconix cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic parameter ranges without verifying pinout and electrical limits.
