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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.7A/3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.7A, 3A
- Rds On (Max) @ Id, Vgs：53mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.13W, 1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4532ADY-T1-E3 is a dual N- and P-channel enhancement mode MOSFET in an SO-8 package. It utilizes TrenchFET technology for low on-resistance. The N-channel device supports a drain-source voltage of 30 V with a maximum continuous drain current of 4.9 A at 25 °C. Its on-state resistance is 0.053 Ω at VGS = 10 V and 4.9 A. The P-channel counterpart provides -30 V breakdown and -3.0 A continuous current. Both channels operate within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- TrenchFET power MOSFET technology
- Halogen-free construction per IEC 61249-2-21
- 100% Rg tested
Applications
- Power management circuits requiring dual polarity switching
- Low-side and high-side load switches
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -E3 designation indicates lead-free compliance, while -GE3 adds halogen-free status. Confirm RoHS Directive 2002/95/EC alignment during procurement. Ensure the selected variant matches the required environmental specifications for the target assembly process.
Selection Notes
Select this component based on the 30 V drain-source voltage rating and the specific on-resistance requirements at 10 V or 4.5 V gate drive levels. Evaluate thermal performance using the provided junction-to-ambient resistance values. Verify that the total gate charge characteristics align with the driving circuit's switching frequency capabilities.
Part Context
This part belongs to the Si4532 family of Vishay Siliconix dual MOSFETs. It shares the SO-8 narrow package format with other variants like the SI4532CDY. The ADY suffix denotes specific electrical thresholds distinct from other series members. The component integrates both N-channel and P-channel devices into a single surface-mount footprint.
Replacement Considerations
SI4532CDY-T1-E3
FAQ
What is the maximum continuous drain current for the N-channel?
The maximum continuous drain current is 4.9 A at an ambient temperature of 25 °C.
How does the on-resistance vary with gate voltage?
The N-channel on-resistance is 0.053 Ω at VGS = 10 V and increases to 0.075 Ω at VGS = 4.5 V.
Is the device compliant with RoHS directives?
Yes, the product is compliant with RoHS Directive 2002/95/EC.
