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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.7A/3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.7A, 3A
- Rds On (Max) @ Id, Vgs：53mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.13W, 1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4532ADY-T1-GE3 is a dual N- and P-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating with an SO-8 surface-mount package. The N-channel provides a maximum on-resistance of 0.053 Ω at 10 V gate drive and a continuous drain current of 4.9 A. The P-channel offers a maximum on-resistance of 0.080 Ω at -10 V gate drive and a continuous drain current of 3.9 A. Total gate charge reaches 16 nC for the N-channel and 20 nC for the P-channel. Maximum power dissipation is 1.2 W for the N-channel and 1.13 W for the P-channel at 25 °C ambient temperature.
Feature Summary
- TrenchFET Power MOSFET architecture
- Halogen-free construction compliant with IEC 61249-2-21
- Logic-level gate threshold operation
Applications
- Power management circuits
- Load switching applications
- DC/DC converter output stages
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against specific order requirements. Validate datasheet revision D specifications against final design parameters to ensure compatibility with target operating conditions.
Selection Notes
Evaluate thermal resistance ratings relative to expected PCB copper area and airflow conditions. Compare total gate charge values against available driver capabilities to optimize switching speed. Ensure selected operating currents remain within absolute maximum ratings across the full specified junction temperature range.
Part Context
This component belongs to the Vishay Siliconix Si4532 series, which includes variants such as SI4532CDY and SI4532ADY-E3. These devices share similar packaging and core electrical characteristics but differ in specific on-resistance thresholds and manufacturing lot qualifications.
Replacement Considerations
SI4532CDY-T1-GE3
FAQ
What is the logic-level gate threshold voltage specification?
The gate threshold voltage is guaranteed at a minimum of 1 V for the N-channel and a maximum of -1 V for the P-channel when tested at a drain current of 250 µA.
How does the device handle reverse recovery time?
The source-drain reverse recovery time is specified between 25 ns and 40 ns for the N-channel and 27 ns to 40 ns for the P-channel under standard test conditions.
