SI4532CDY-T1-GE3

Overview

The Vishay Siliconix SI4532CDY-T1-GE3 is a dual N- and P-channel enhancement-mode MOSFET in an SO-8 package. It utilizes TrenchFET technology for optimized performance. The N-channel device supports a drain-source voltage of 30 V with a maximum continuous drain current of 6.0 A at TC = 25 °C, featuring a typical on-resistance of 0.047 Ω at VGS = 10 V. The P-channel counterpart provides a 30 V rating and a maximum continuous drain current of -4.3 A at TC = 25 °C, with a typical on-resistance of 0.089 Ω at VGS = -10 V. Both channels are rated for a maximum power dissipation of 2.78 W at TC = 25 °C.

Feature Summary

• Incorporates TrenchFET Power MOSFET technology to achieve low on-resistance and fast switching characteristics.
• Includes comprehensive reliability testing, specifically 100% gate resistance (Rg) and single-pulse avalanche energy (UIS) verification.

Applications

• DC/DC Converter
• Load Switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. The GE3 designation indicates lead-free and halogen-free construction compliant with IEC 61249-2-21 standards. Ensure that the component meets RoHS Directive 2002/95/EC requirements for your intended application before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual-channel solution is required for low-voltage switching applications. The SO-8 package facilitates surface-mount assembly while providing adequate thermal management through the exposed drain pad. Evaluate the junction-to-ambient thermal resistance limits under your specific PCB layout conditions to ensure operation within the specified temperature range.

Part Context

This part belongs to the Vishay Siliconix Si4532CDY series, which features isolated N- and P-channel MOSFETs in a single SO-8 package. The product line is designed for space-constrained designs requiring complementary channel configurations. The datasheet document number is 64805, revision S11-0652-Rev. B.

Replacement Considerations

Consult the manufacturer's documentation for verified alternative part numbers or cross-reference options. Direct replacements must match the electrical ratings, pin configuration, and thermal characteristics of the original component.

FAQ

What is the maximum pulsed drain current for the N-channel?

The maximum pulsed drain current (IDM) for the N-channel is 24 A with a 10 µs pulse width.

Does the device support avalanche energy?

Yes, the datasheet specifies 100% UIS (Unclamped Inductive Switching) testing. The single-pulse avalanche energy (EAS) is 2.5 mJ for the N-channel and 3.2 mJ for the P-channel at L = 0.1 mH.

What is the operating junction temperature range?

The operating junction and storage temperature range (TJ, Tstg) is from -55 °C to +150 °C.