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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：830pF @ 15V
- Power - Max：1W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4542DY is a single N-channel and P-channel enhancement mode MOSFET manufactured by onsemi. It utilizes PowerTrench technology within an SOIC-8 surface-mount package. The device supports a drain-source voltage of 30 V with continuous drain currents rated at 6 A for the N-channel and 6 A for the P-channel. On-resistance values are specified at 35 mΩ for the N-channel and 45 mΩ for the P-channel. The component operates within a temperature range of -55 °C to +175 °C, featuring a maximum power dissipation of 1.6 W.
Feature Summary
- Integrates complementary N-channel and P-channel transistors in a compact dual configuration
- Employs TrenchFET technology to achieve low on-resistance characteristics
- Designed for high-temperature operation up to 175 °C junction temperature
Applications
- DC/DC converter output stages
- Load switch circuits
- Motor control applications
Procurement Notes
Verify the manufacturer designation carefully, as historical records indicate production by Vishay/Siliconix before acquisition by onsemi. Confirm the specific suffix and RoHS compliance status against current datasheets. Ensure the SOIC-8 package dimensions match the target PCB footprint requirements prior to integration.
Selection Notes
Select this component when a matched N/P pair is required for half-bridge or synchronous rectification topologies. The 30 V rating suits low-voltage systems. Evaluate thermal management needs given the 1.6 W power dissipation limit in the SOIC-8 package. Compare gate charge specifications against driver capabilities for switching speed optimization.
Part Context
This part belongs to the SI45 series of dual MOSFETs from onsemi. It serves as a successor to earlier Siliconix designs. The device consolidates two discrete transistors into one package to reduce board space. It is widely used in portable electronics and industrial control modules requiring efficient power switching.
Replacement Considerations
The SI4532DY is a documented dual N/P channel alternative from onsemi. Verify pin compatibility and electrical parameter alignment before substitution.
