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The SI4544DY-T1-E3 is a complementary N- and P-channel MOSFET pair manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance in an SOIC-8 surface-mount package. The device features a -40V drain-source voltage for the N-channel and a +20V rating for the P-channel. Key electrical parameters include a maximum continuous drain current of 16A for the N-channel and 17A for the P-channel, with respective on-resistances of 9mΩ and 11mΩ at specified gate biases. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix against official manufacturer documentation to confirm tape-and-reel packaging and lead-free compliance. Cross-reference the full part number with current Vishay Siliconix datasheets to ensure availability status and pinout compatibility before integration into designs.
Select this component when a matched N/P pair is required for synchronous applications. Ensure the -40V and +20V voltage ratings align with the system's supply rails. Verify that the thermal performance in the SOIC-8 package meets the heat dissipation requirements of the target application under continuous load conditions.
This part belongs to the SI4 series of Vishay Siliconix MOSFETs. It is functionally related to other complementary pairs in the family, such as the SI4599DY-T1-GE3, which offers similar dual-transistor functionality in the same package format but with different voltage and current specifications.