SI4544DY-T1-E3

SI4544DY-T1-E3

  • Description:MOSFET N/P-CH 30V 8SOIC
  • Series:TrenchFET®

SKU:3e5b2094964e Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel, Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:35mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:2.4W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

Download product information

SI4544DY-T1-E3

Overview

The SI4544DY-T1-E3 is a complementary N- and P-channel MOSFET pair manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance in an SOIC-8 surface-mount package. The device features a -40V drain-source voltage for the N-channel and a +20V rating for the P-channel. Key electrical parameters include a maximum continuous drain current of 16A for the N-channel and 17A for the P-channel, with respective on-resistances of 9mΩ and 11mΩ at specified gate biases. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

  • Integrated complementary N- and P-channel configuration in a single package
  • Low on-resistance characteristics enabled by TrenchFET planar technology
  • Designed for high-efficiency power switching applications

Applications

  • DC/DC converter synchronous rectification
  • Power management circuits requiring paired switching elements
  • Battery protection modules

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm tape-and-reel packaging and lead-free compliance. Cross-reference the full part number with current Vishay Siliconix datasheets to ensure availability status and pinout compatibility before integration into designs.

Selection Notes

Select this component when a matched N/P pair is required for synchronous applications. Ensure the -40V and +20V voltage ratings align with the system's supply rails. Verify that the thermal performance in the SOIC-8 package meets the heat dissipation requirements of the target application under continuous load conditions.

Part Context

This part belongs to the SI4 series of Vishay Siliconix MOSFETs. It is functionally related to other complementary pairs in the family, such as the SI4599DY-T1-GE3, which offers similar dual-transistor functionality in the same package format but with different voltage and current specifications.

SI4544DY-T1-E3SI4544DY-T1-E3

Click on the inquiry