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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：690pF @ 20V
- Power - Max：3.1W, 3.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4554DY-T1-GE3 is a dual MOSFET containing one N-channel and one P-channel device in an SO-8 package. It utilizes TrenchFET technology with a 40 V drain-source voltage rating for both channels. The N-channel offers a maximum on-resistance of 24 mΩ at 10 V gate drive, while the P-channel provides 27 mΩ at -10 V. Continuous drain current reaches 8 A at 25 °C case temperature. Total gate charge is typically 13.3 nC for the N-channel and 41.5 nC for the P-channel. Operating junction temperature spans from -55 °C to +150 °C.
Feature Summary
- Dual configuration integrating complementary N-channel and P-channel transistors within a single surface-mount package.
- TrenchFET power MOSFET architecture designed to minimize on-state resistance and switching losses.
- Comprehensive testing includes 100% gate resistance verification and unclamped inductive switching (UIS) capability.
Applications
- Motor Drive
- Power Switching Circuits
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number and datasheet revision against official Vishay documentation. Confirm that the ordering suffix corresponds to lead-free and halogen-free specifications as defined in the product summary. Ensure the received package matches the SO-8 physical dimensions provided in the package information section.
Selection Notes
Select this component when a matched pair of low-voltage N-channel and P-channel MOSFETs is required in a compact footprint. Evaluate thermal performance based on the specified junction-to-ambient and junction-to-foot resistance values. Verify that the 40 V breakdown voltage and 8 A continuous current ratings align with the specific circuit load requirements.
Part Context
This component belongs to the Vishay Siliconix Si4554 series of dual MOSFETs. It is manufactured using silicon technology and features the TrenchFET brand. The device is compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definitions.
Replacement Considerations
No public substitute part numbers are documented in the provided source material.
FAQ
What is the maximum power dissipation for the N-channel?
The maximum power dissipation for the N-channel is 3.1 W at a case temperature of 25 °C.
Does the device support unclamped inductive switching?
Yes, the datasheet confirms that the device is 100% UIS tested.
What is the typical turn-off delay time for the N-channel?
The typical turn-off delay time for the N-channel is 16 ns under standard test conditions.
