SI4561DY-T1-GE3

$1.64

Description：MOSFET N/P-CH 40V 6.8A 8SOIC
Series：TrenchFET®

SKU:84b2b0fb13b6 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 6.8A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：6.8A, 7.2A
Rds On (Max) @ Id, Vgs：35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：640pF @ 20V
Power - Max：3W, 3.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4561DY-T1-GE3

Overview

The SI4561DY-T1-GE3 is a dual N-channel and P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology within an SO-8 surface-mount package. The device features a drain-source voltage rating of 40V for both channels. Continuous drain current is specified at 6.8A. On-resistance values are 24 mOhms for the N-channel and 27 mOhms for the P-channel at Vgs of 10V. Gate-source voltage limits are ±20V. Threshold voltages range from 1V to 1.2V. Total gate charge is 20nC maximum. Input capacitance is 640pF maximum.

Feature Summary

Integrates complementary N-channel and P-channel power MOSFETs in a single compact package
Employs TrenchFET technology to achieve low on-resistance characteristics
Designed for surface-mount applications with standard SO-8 footprint compatibility

Applications

DC/DC converter circuits requiring complementary switching pairs
Motor driver interfaces utilizing half-bridge configurations
Power management modules needing integrated N/P channel solutions

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Ensure storage conditions meet moisture sensitivity level requirements. Validate pinout alignment with target PCB layout specifications before assembly.

Selection Notes

Evaluate thermal performance constraints based on total power dissipation capabilities. Compare on-resistance values against load current requirements for efficiency targets. Assess gate charge parameters for switching speed optimization. Verify package dimensions fit within available board space restrictions.

Part Context

This component belongs to the SI4 series of dual MOSFET arrays from Vishay Siliconix. It complements other devices like the SI4554DY-T1-GE3 offering similar dual-channel functionality. The product line emphasizes high-density power switching solutions for modern electronic designs.