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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 4.5V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4562DY-T1-E3 is a dual N- and P-channel MOSFET manufactured by Vishay Siliconix. It features a maximum drain-source voltage of 20V for both channels. The N-channel exhibits an on-resistance of 0.025 ohms at VGS = 4.5V and 0.035 ohms at VGS = 2.5V, with a continuous drain current of 7.1A. The P-channel has an on-resistance of 0.033 ohms at VGS = -4.5V and 0.050 ohms at VGS = -2.5V, supporting a continuous drain current of 6.2A. The device operates up to a maximum junction temperature of 150°C and dissipates up to 2W of power in a surface-mount package.
Feature Summary
- Integrates complementary N- and P-channel MOSFETs within a single compact package
- Optimized low on-resistance characteristics for efficient power switching applications
- Capable of operation at elevated temperatures up to 150°C
Applications
- Low-side and high-side power switching circuits
- DC/DC converter output stages
- Load switch implementations
Procurement Notes
Verify the specific suffix 'T1' indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation, as some variants may differ. Ensure the ordering part number matches the exact electrical specifications required for the design. Cross-reference datasheets for thermal resistance values relevant to the intended PCB layout.
Selection Notes
Select this component where space constraints require integrated dual-channel switching functionality. Evaluate the 20V rating against system voltage requirements to ensure adequate headroom. Consider the SO-8 package thermal performance for heat dissipation needs. Compare on-resistance values at the specific gate drive voltages used in the target application to verify efficiency targets.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. The SI4562 series provides a solution for applications requiring both N-channel and P-channel devices in a minimal footprint. The 'E3' suffix typically denotes lead-free and RoHS-compliant manufacturing processes.
Replacement Considerations
Consult official replacement guides for verified substitutes. Generic equivalents may not match the specific on-resistance or package thermal characteristics.
