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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 4.5V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4562DY-T1-GE3 is a dual N- and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance at a gate-source voltage of 2.5 V. The device features a maximum drain-source voltage of 20 V, with continuous drain currents rated at 7.1 A for the N-channel and 6.2 A for the P-channel. Maximum power dissipation is specified at 2 W. The component operates within a temperature range from -55 °C to +150 °C and is housed in an SOIC-8 surface-mount package.
Feature Summary
- Dual configuration integrating both N-channel and P-channel enhancement-mode transistors within a single package
- TrenchFET power MOSFET architecture optimized for low gate charge and fast switching performance
- Designed for operation with a 2.5 V gate drive capability to support low-voltage logic interfaces
Applications
- Battery protection circuits requiring dual-switch functionality
- Load switch applications in portable electronic devices
- Power management systems utilizing low-voltage logic control
Procurement Notes
Verify compliance requirements before procurement as specific listings indicate non-RoHS status despite GE3 suffix conventions. Confirm the exact datasheet version matches the required electrical parameters. Ensure the SOIC-8 package dimensions align with the target PCB footprint. Validate that the 2 W power dissipation rating meets the thermal design constraints of the final assembly.
Selection Notes
Select this component when a compact dual-switch solution is needed for 20 V systems. The 2.5 V gate threshold makes it suitable for microcontroller-driven loads. Compare Rds(on) values against similar Vishay parts like the SI4554DY if higher voltage ratings are acceptable. Consider the 2 W dissipation limit when designing thermal paths for high-current scenarios.
Part Context
This part belongs to the Vishay SI4 series of TrenchFET MOSFETs. It shares the SOIC-8 package form factor with other dual-channel variants in the lineup. The product line emphasizes low on-resistance and fast switching for consumer electronics. The GE3 suffix typically denotes lead-free and halogen-free compliance according to manufacturer standards.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical ratings before considering alternative dual MOSFET packages.
