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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 6.6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6.6A, 5.6A
- Rds On (Max) @ Id, Vgs：39mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：625pF @ 20V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4565ADY-T1-GE3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage rating of 60 V and a continuous drain current of 20 A. Key electrical parameters include a maximum on-resistance of 17 mΩ at a gate-source voltage of 10 V. The component operates within a temperature range from -55 °C to +150 °C and has a power dissipation rating of 3.2 W.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs into a single compact package for space-constrained designs.
- TrenchFET technology implementation provides low on-resistance characteristics to minimize conduction losses.
- Enhanced thermal performance capabilities support operation in high-temperature environments up to 150 °C.
Applications
- DC-DC converter circuits requiring synchronous rectification or high-side switching.
- Load switch applications for power distribution management in portable electronics.
- Motor control interfaces for driving small DC motors or solenoids.
Procurement Notes
Verify the specific suffix and manufacturer details against official datasheets before procurement. Confirm availability status as components may be subject to obsolescence or supply constraints. Ensure that the ordering information matches the exact package type and electrical specifications required for the design.
Selection Notes
Select this component when a dual N-channel configuration is required in an SOIC-8 footprint. Evaluate the 17 mΩ on-resistance against thermal requirements for the intended load current. Compare the 60 V breakdown voltage with system rail voltages to ensure adequate safety margins during operation.
Part Context
This part belongs to the SI4 series of power MOSFETs from Vishay Siliconix. The series is characterized by the use of advanced TrenchFET process technology to achieve low RDS(on) values. These devices are designed for general-purpose switching applications where efficiency and package density are critical factors.
Replacement Considerations
Consult official replacement guides for verified substitute part numbers. Cross-reference pinouts and electrical ratings carefully to ensure compatibility with existing circuit layouts and thermal management systems.
