SI4569DY-T1-E3

Overview

The SI4569DY-T1-E3 is a dual MOSFET array manufactured by Vishay Siliconix, housed in an 8-SOIC surface-mount package. It integrates one N-channel and one P-channel enhancement-mode field-effect transistor within a single component. The device supports a drain-source voltage rating of 40 V for both channels. Continuous drain current capabilities are specified at 7.6 A for the N-channel and 7.9 A for the P-channel. Total power dissipation is rated at 3.1 W for the N-channel and 3.2 W for the P-channel under standard conditions.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a compact SO-8 package
• Supports high continuous drain currents up to 7.9 A
• Rated for 40 V drain-source voltage across both channels

Applications

• DC-DC converter output stages
• Motor driver circuits
• Power management modules

Procurement Notes

Verify the specific suffix E3 indicates lead-free compliance when sourcing replacements. Confirm that the T1 designation corresponds to the correct tape and reel packaging format required for automated assembly processes. Ensure the manufacturer matches Vishay Siliconix specifications to maintain electrical performance consistency.

Selection Notes

Select this component for designs requiring matched N/P channel pairs in limited board space. Evaluate thermal constraints carefully as the SO-8 package limits heat dissipation compared to larger packages. Verify that the 40 V breakdown voltage meets the circuit's maximum operating requirements without excessive derating.

Part Context

This part belongs to the Vishay Siliconix discrete semiconductor lineup, specifically designed for power switching applications. It serves as a compact solution for half-bridge configurations where space efficiency is critical. The integration reduces component count and simplifies layout compared to using separate discrete transistors.

Replacement Considerations

SI4569DY-T1-GE3 is a confirmed public substitute with identical electrical characteristics.