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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 7.6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.6A, 7.9A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：855pF @ 20V
- Power - Max：3.1W, 3.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4569DY-T1-GE3 is a dual N-channel power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 17 A. The maximum gate-source voltage (Vgs) is rated at ±20 V. Key electrical parameters include a typical on-resistance (Rds(on)) of 4.5 mΩ at Vgs = 10 V and 5.5 mΩ at Vgs = 4.5 V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for complementary or half-bridge applications
- TrenchFET technology for optimized on-resistance and switching performance
- Enhancement mode operation with low gate charge characteristics
Applications
- DC-DC converter synchronous rectification
- Motor control circuits
- Power management modules
Procurement Notes
Verify the specific suffix 'T1' against the manufacturer's official documentation to confirm reel packaging specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure the SOIC-8 footprint matches the target PCB design guidelines before finalizing procurement.
Selection Notes
Select this component when a dual N-channel topology is required in an SOIC-8 package. Evaluate the 4.5 mΩ on-resistance against thermal dissipation requirements at the intended load current. Verify that the 20 V rating provides sufficient margin for the system's supply voltage.
Part Context
This part belongs to the SI4 series of discrete power MOSFETs from Vishay Siliconix. The series is characterized by the use of advanced TrenchFET process technology, which allows for high current density and low on-resistance in small surface-mount packages like the SOIC-8.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Potential alternatives may include other dual N-channel MOSFETs in SOIC-8 packages with comparable Vds and Rds(on) ratings, provided pinout compatibility is confirmed.
