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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.3A, 7.7A
- Rds On (Max) @ Id, Vgs：22mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W, 1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4816DY-T1-E3 is a dual N-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a 20 V gate-source threshold. The device integrates two independent channels with typical on-resistances of 22 mΩ and 17 mΩ, supporting continuous drain currents of 5.3 A and 6.3 A respectively. Packaged in an SO-8 surface-mount case, it includes integrated Schottky diodes for efficient body diode replacement. The component operates within a temperature range of -55°C to 150°C junction temperature.
Feature Summary
- Dual N-channel configuration with integrated Schottky diodes for synchronous rectification applications
- TrenchFET power MOSFET technology optimized for low on-resistance and fast switching performance
- SO-8 surface-mount package design suitable for automated assembly and compact board layouts
Applications
- DC-DC converter circuits requiring synchronous rectification
- Power management modules for portable electronic devices
- Battery protection and load switch applications
Procurement Notes
This component has been officially discontinued by the manufacturer. Verify end-of-life status through official obsolescence notifications before finalizing designs. Sourcing may only be available through limited surplus channels or authorized distributors holding remaining stock. Ensure compatibility with replacement parts such as the SI4816BDY-T1-GE3 if continuing production.
Selection Notes
Select this part for applications requiring dual N-channel isolation with low Rds(on) in a small footprint. Consider thermal dissipation capabilities given the 1.25 W power rating in an SO-8 package. Evaluate the integrated Schottky diode characteristics for reverse current handling. Compare against newer generations like the SI4816BDY for potential performance improvements and availability.
Part Context
The SI4816DY belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. This series is designed for high-efficiency power switching applications. The specific model provides dual channel functionality within a single SO-8 package, reducing component count compared to discrete solutions. It represents a legacy product line now superseded by updated variants offering enhanced electrical specifications.
Replacement Considerations
The SI4816BDY-T1-GE3 is documented as a direct replacement for the SI4816DY-T1-E3. Verify pinout compatibility and electrical parameter alignment during substitution. The BDY variant may offer improved specifications; review datasheets for differences in on-resistance and current ratings.
